FEATURES 
· No write delays
· Unlimited write endurance
· Data retention greater than 20 years
· Automatic data protection on power loss
· Block write protection
· Fast, simple SPI interface with up to 40 MHz clock rate
· 2.7 to 3.6 Volt power supply range
· Low current sleep mode
· Industrial temperatures
· Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
· Direct replacement for serial EEPROM, Flash, FeRAM
· AEC-Q100 Grade 1 Option

INTRODUCTION
The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR25H10 offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.
Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H10 is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins.
The MR25H10 is available in either a 5 mm x 6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products.
The MR25H10 provides highly reliable data storage over a wide range of temperatures. The product is offered with Industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options.

      有限公司是英尚**有限公司旗下大陸子公司，成立于2007年，是一家專業的靜態隨機記憶體產品及方案提供商，十年來專業致力代理分銷存儲器芯片IC, SRAM、MRAM、pSRAM、 FLASH芯片、SDRAM（DDR1/DDR2/DDR3）等,為客人提供性價比較高的產品及方案。原廠供貨，交期**，價格優勢，專業服務。  
    產品簡介
    1. Low power SRAM (低功耗靜態隨機存儲器)1Mbit~8Mbit.
    2. SPI SRAM(串行靜態隨機存儲器)64Kbit~512Kbit.
    3. PSRAM[Pseudo SRAM,UtRAM] (虛擬靜態隨機存儲器)4Mbit~64Mbit.
    4. Cellular RAM(偽靜態隨機存儲器)4Mbit~64Mbit.
    5.NvSRAM,F-RAM,MRAM(非易失性存儲器)256Kbit~1Gbit
    6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit
    7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit