FEATURES 
? No write delays
? Unlimited write endurance
? Data retention greater than 20 years
? Automatic data protection on power loss
? Block write protection
? Fast, simple SPI interface with up to 40 MHz clock rate
? 2.7 to 3.6 Volt power supply range
? Low current sleep mode
? Industrial temperatures
? Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
? Direct replacement for serial EEPROM, Flash, FeRAM
? AEC-Q100 Grade 1 Option

INTRODUCTION
The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR25H10 offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.
Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H10 is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins.
The MR25H10 is available in either a 5 mm x 6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products.
The MR25H10 provides highly reliable data storage over a wide range of temperatures. The product is offered with Industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options.

存儲(chǔ)器的類型將決定整個(gè)嵌入式系統(tǒng)的操作和性能，因此存儲(chǔ)器的選擇是一個(gè)非常重要的決策。無論系統(tǒng)是采用電池供電還是由市電供電，應(yīng)用需求將決定存儲(chǔ)器的類型(易失性或非易失性)以及使用目的(存儲(chǔ)代碼、數(shù)據(jù)或者兩者兼有)。另外，在選擇過程中,存儲(chǔ)器的尺寸和成本也是需要考慮的重要因素。

      有限公司是英尚**有限公司旗下大陸子公司，成立于2007年，是一家專業(yè)的靜態(tài)隨機(jī)記憶體產(chǎn)品及方案提供商，十年來專業(yè)致力代理分銷存儲(chǔ)器芯片IC, SRAM、MRAM、pSRAM、 FLASH芯片、SDRAM（DDR1/DDR2/DDR3）等,為客人提供性價(jià)比較高的產(chǎn)品及方案。原廠供貨，交期**，價(jià)格優(yōu)勢(shì)，專業(yè)服務(wù)。  
    產(chǎn)品簡(jiǎn)介
    1. Low power SRAM (低功耗靜態(tài)隨機(jī)存儲(chǔ)器)1Mbit~8Mbit.
    2. SPI SRAM(串行靜態(tài)隨機(jī)存儲(chǔ)器)64Kbit~512Kbit.
    3. PSRAM[Pseudo SRAM,UtRAM] (虛擬靜態(tài)隨機(jī)存儲(chǔ)器)4Mbit~64Mbit.
    4. Cellular RAM(偽靜態(tài)隨機(jī)存儲(chǔ)器)4Mbit~64Mbit.
    5.NvSRAM,F-RAM,MRAM(非易失性存儲(chǔ)器)256Kbit~1Gbit
    6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit
    7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit