存儲器的類型將決定整個嵌入式系統的操作和性能，因此存儲器的選擇是一個非常重要的決策。無論系統是采用電池供電還是由市電供電，應用需求將決定存儲器的類型(易失性或非易失性)以及使用目的(存儲代碼、數據或者兩者兼有)。

INTRODUCTION
The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR25H10 offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.
Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H10 is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins.
The MR25H10 is available in either a 5 mm x 6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products.
The MR25H10 provides highly reliable data storage over a wide range of temperatures. The product is offered with Industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options.

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    產品簡介
    1. Low power SRAM (低功耗靜態隨機存儲器)1Mbit~8Mbit.
    2. SPI SRAM(串行靜態隨機存儲器)64Kbit~512Kbit.
    3. PSRAM[Pseudo SRAM,UtRAM] (虛擬靜態隨機存儲器)4Mbit~64Mbit.
    4. Cellular RAM(偽靜態隨機存儲器)4Mbit~64Mbit.
    5.NvSRAM,F-RAM,MRAM(非易失性存儲器)256Kbit~1Gbit
    6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit
    7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit